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Gallium Nitride - Power Conversion Semiconductors

The revolution in power electronics – Gallium Nitride based power transistors in 100 V and 650 V







GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors has launched a series of five normally-off 100 V GaN E-HEMTs (Enhancement Mode High Electron Mobility Transistor) and a low inductance, thermally-efficient 650 V E-HEMT family.

Based on GaN Systems’ proprietary Island Technology®, its devices significantly outperform comparable silicon based devices in terms of higher switching frequency and efficiency.

GaN Systems’ comprehensive product range will enable the development of next-Generation power conversion technology, leading to higher efficiency, smaller board layouts and fewer peripheral components.

Applications to benefit are ranging from onboard battery charging, high-voltage DC-DC and AC-DC conversion, UPS, air-conditioning, appliances, heavy-duty battery-operated power tools and E-bikes.

650 V E-HEMT transistors

>> In Stock  >> Order now!  -> GaN(at)

  Part No. Voltage
GS66502B 650 V 7.5 A 200 mΩ 5.0 x 6.6 x 0.51 Bottom-side
GS66504B 650 V 15 A 100 mΩ 5.0 x 6.6 x 0.51 Bottom-side
GS66506T 650 V 22.5 A 67 mΩ 5.6 x 4.5 x 0.54 Top-side
GS66508P GS66508B 650 V 30 A 50 mΩ 7.0 x 8.4 x 0.51 Bottom-side
GS66508P GS66508P 650 V 30 A 50 mΩ 10.0 x 8.7 x 0.51 Bottom-side
GS66508T GS66508T 650 V 30 A 50 mΩ 6.9 x 4.5 x 0.54 Top-side
GS66516T 650 V 60 A 25 mΩ 9.0 x 7.6 x 0.54 Top-side
GS66516B 650 V 60 A 25 mΩ 11.0 x 9.0 x 0.51 Bottom-side



100 V E-HEMT transistors

>> In Stock  >> Order now!  -> GaN(at)

  Part No. Voltage
GS61004B 100 V 45 A 15 mΩ 4.6 x 4.4 x 0.51 Bottom-side
GS61008P 100 V 90 A 7.0 mΩ 7.0 x 4.6 x 0.51 Bottom-side
GS61008T 100 V 90 A 7.0 mΩ 7.0 x 4.0 x 0.54 Top-side


Evaluation boards & Reference Designs

  Link Topic
GaN Systems Website Evaluation boards and reference designs



  Link Topic
GN001_App_Note Design with GaN Enhancement mode HEMT

Thermal Design for Top-Side Cooled GaNPX® packaged Devices


Design considerations of paralleled GaN HEMT

GN005_App_Note PCB Thermal Design Guide for GaN
Enhancement Mode Power Transistors

SPICE model for GaN HEMT
- usage guidelines and example


Modeling Thermal Behavior of GaNPX®
E-HEMTs Using RC Thermal SPICE Models


GaN Switching Loss Simulation
Using LTSpice




  Link Description
ECOMAL_GaN Leaflet General information from ECOMAL
about GaN Systems transistors
ECOMAL_News_Service General information from ECOMAL:
Focus products



About GaN Systems:

GaN Systems manufactures a range of Gallium Nitride high power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power conversion applications.
Featuring exceptionally low on-resistance and negligible charge storage, these devices enable switching efficiencies well in excess of current silicon based solutions and offer dramatic benefits to switching power supply designs, inverters, hybrid and electric vehicles, battery management and power factor correction.
Based on the breakthrough GaN Systems device design IP, these gallium nitride devices use low cost GaN-on-silicon base wafers.
For the first time, compound semiconductor devices are cost competitive with silicon devices, while offering vastly superior performance.

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